BCV61A,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Form :

Gull wing

Max Operating Temperature :

150°C

Collector Emitter Voltage (VCEO) :

30V

Number of Terminations :

4

Applications :

Current Mirror

Radiation Hardening :

No

Package / Case :

TO-253-4, TO-253AA

Min Operating Temperature :

-65°C

Emitter Base Voltage (VEBO) :

6V

Collector Emitter Breakdown Voltage :

30V

Element Configuration :

Dual

Frequency :

100MHz

Published :

2009

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

30V

Mounting Type :

Surface Mount

Gain Bandwidth Product :

100MHz

Case Connection :

COLLECTOR

Current Rating :

100mA

Power Dissipation :

250mW

Transistor Type :

2 NPN (Dual) Current Mirror

Base Part Number :

BCV61

Max Collector Current :

100mA

Max Power Dissipation :

250mW

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain-Min (hFE) :

110

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Number of Pins :

4

Number of Elements :

2

Pin Count :

4

Polarity :

NPN

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Transition Frequency :

100MHz

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks