BC860C,235
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- Mfr.Part #
- BC860C,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO236AB
- Stock
- 3,253
- In Stock ：
- 3,253
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 250mW
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Power Dissipation :
- 250mW
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 45V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Contact Plating :
- Tin
- Base Part Number :
- BC860
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 45V
- Published :
- 2009
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Series :
- Automotive, AEC-Q101
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- ECCN Code :
- EAR99
- Datasheets
- BC860C,235
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC860C,235 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC860C,235 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC860C,235 Applications
There are a lot of Nexperia USA Inc.
BC860C,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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