BC856SH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Arrays

Reference Standard :

AEC-Q101

Base Part Number :

BC856S

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

250mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

80V

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

2mm

Transition Frequency :

250MHz

Transistor Type :

2 PNP (Dual)

Contact Plating :

Tin

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Factory Lead Time :

4 Weeks

Emitter Base Voltage (VEBO) :

5V

Operating Temperature :

150°C TJ

Polarity :

PNP

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Gain Bandwidth Product :

250MHz

Collector Emitter Voltage (VCEO) :

65V

Current - Collector (Ic) (Max) :

100mA

Package / Case :

6-VSSOP, SC-88, SOT-363

Published :

2005

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Current - Collector Cutoff (Max) :

15nA ICBO

Collector Emitter Saturation Voltage :

250mV

hFE Min :

200

Voltage :

65V

Element Configuration :

Dual

Width :

1.25mm

Current :

1A

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Height :

800μm

Number of Pins :

6

Collector Emitter Breakdown Voltage :

65V

Max Frequency :

250MHz