BC850AMTF
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- Mfr.Part #
- BC850AMTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 33,029
- In Stock ：
- 33,029
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- hFE Min :
- 110
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Additional Feature :
- LOW NOISE
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Voltage - Rated DC :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Factory Lead Time :
- 6 Weeks
- Gain Bandwidth Product :
- 300MHz
- Max Breakdown Voltage :
- 45V
- Current Rating :
- 100mA
- Transition Frequency :
- 300MHz
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 310mW
- Height :
- 930μm
- Collector Emitter Saturation Voltage :
- 200mV
- Transistor Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Position :
- Dual
- Base Part Number :
- BC850
- Frequency :
- 300MHz
- Width :
- 1.3mm
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Collector Emitter Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 310mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Published :
- 2008
- Weight :
- 30mg
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 100mA
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Qualification Status :
- Not Qualified
- Length :
- 2.92mm
- Datasheets
- BC850AMTF
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC850AMTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC850AMTF Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC850AMTF Applications
There are a lot of ON Semiconductor
BC850AMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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