BC856BDW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Pins :

6

Transistor Application :

AMPLIFIER

Transistor Type :

2 PNP (Dual)

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

80V

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Current Rating :

-100mA

Max Power Dissipation :

380mW

Polarity :

PNP

Current - Collector Cutoff (Max) :

15nA ICBO

Width :

1.25mm

hFE Min :

220

Max Breakdown Voltage :

65V

Collector Emitter Breakdown Voltage :

65V

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Frequency :

100MHz

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Package / Case :

6-TSSOP, SC-88, SOT-363

Factory Lead Time :

8 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

65V

Terminal Form :

Gull wing

Element Configuration :

Dual

Emitter Base Voltage (VEBO) :

5V

Contact Plating :

Tin

Number of Elements :

2

Transistor Element Material :

SILICON

Length :

2mm

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

-650mV

Gain Bandwidth Product :

100MHz

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Voltage - Rated DC :

-65V

Power Dissipation :

380mW

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Height :

900μm

Max Collector Current :

100mA

Published :

2005

Surface Mount :

yes

Transition Frequency :

100MHz