BC640,126
- Mfr.Part #
- BC640,126
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A TO92-3
- Stock
- 36,091
- In Stock :
- 36,091
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- O-PBCY-T3
- Transistor Element Material :
- SILICON
- Base Part Number :
- BC640
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- ECCN Code :
- EAR99
- Power - Max :
- 830mW
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Power Dissipation-Max (Abs) :
- 0.8W
- Peak Reflow Temperature (Cel) :
- 250
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Frequency - Transition :
- 145MHz
- Packaging :
- Tape and Box (TB)
- Published :
- 2004
- Current - Collector (Ic) (Max) :
- 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Transistor Type :
- PNP
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- HTS Code :
- 8541.21.00.95
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Reach Compliance Code :
- Unknown
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Configuration :
- Single
- Transition Frequency :
- 100MHz
- Terminal Position :
- BOTTOM
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- PNP
- VCEsat-Max :
- 0.5 V
- Datasheets
- BC640,126
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC640,126 Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 80V.
BC640,126 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz
BC640,126 Applications
There are a lot of NXP USA Inc.
BC640,126 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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