BC640,112
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- Mfr.Part #
- BC640,112
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A TO92-3
- Stock
- 10,334
- In Stock ：
- 10,334
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2004
- VCEsat-Max :
- 0.5 V
- Mounting Type :
- Through Hole
- Transition Frequency :
- 145MHz
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- HTS Code :
- 8541.21.00.75
- Pin Count :
- 3
- Frequency - Transition :
- 145MHz
- Power - Max :
- 830mW
- Base Part Number :
- BC640
- Surface Mount :
- No
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Power Dissipation-Max (Abs) :
- 0.83W
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- JESD-30 Code :
- O-PBCY-T3
- Terminal Position :
- BOTTOM
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Peak Reflow Temperature (Cel) :
- 250
- Current - Collector (Ic) (Max) :
- 1A
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Datasheets
- BC640,112
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC640,112 Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 145MHz.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.
BC640,112 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 145MHz
BC640,112 Applications
There are a lot of NXP USA Inc.
BC640,112 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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