BC489BZL1G
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- Mfr.Part #
- BC489BZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 32,761
- In Stock ：
- 32,761
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 1A
- Transistor Type :
- NPN
- Max Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 80V
- HTS Code :
- 8541.21.00.75
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Continuous Collector Current :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 300mV
- Published :
- 2006
- Base Part Number :
- BC489
- RoHS Status :
- RoHS Compliant
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- hFE Min :
- 40
- Current Rating :
- 500mA
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 300mV
- Voltage - Rated DC :
- 80V
- Pbfree Code :
- yes
- Reach Compliance Code :
- Unknown
- Max Collector Current :
- 500mA
- Packaging :
- Tape and Box (TB)
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Transition Frequency :
- 200MHz
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- Additional Feature :
- EUROPEAN PART NUMBER
- Gain Bandwidth Product :
- 200MHz
- Collector Base Voltage (VCBO) :
- 80V
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Datasheets
- BC489BZL1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC489BZL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 2V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 100mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 200MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
BC489BZL1G Features
the DC current gain for this device is 160 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 200MHz
BC489BZL1G Applications
There are a lot of ON Semiconductor
BC489BZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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