BC489
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- Mfr.Part #
- BC489
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 25,590
- In Stock ：
- 25,590
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Contains Lead
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Collector Current :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 300mV
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 100mA 2V
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 80V
- Peak Reflow Temperature (Cel) :
- 240
- JESD-609 Code :
- e0
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Current Rating :
- 500mA
- Transition Frequency :
- 200MHz
- Pbfree Code :
- No
- RoHS Status :
- Non-RoHS Compliant
- Lifecycle Status :
- OBSOLETE (Last Updated: 4 days ago)
- Max Power Dissipation :
- 625mW
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Number of Elements :
- 1
- Voltage - Rated DC :
- 80V
- Polarity/Channel Type :
- NPN
- Published :
- 2006
- Collector Emitter Breakdown Voltage :
- 80V
- Gain Bandwidth Product :
- 200MHz
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 1A
- HTS Code :
- 8541.21.00.75
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Base Part Number :
- BC489
- hFE Min :
- 15
- Collector Emitter Saturation Voltage :
- 300mV
- Datasheets
- BC489
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC489 Overview
In this device, the DC current gain is 60 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BC489 Features
the DC current gain for this device is 60 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 200MHz
BC489 Applications
There are a lot of ON Semiconductor
BC489 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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