BAP55LX,315
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- Mfr.Part #
- BAP55LX,315
- Manufacturer
- NXP Semiconductors
- Package / Case
- 2-XDFN
- Datasheet
- Download
- Description
- RF DIODE PIN 50V 135MW 2DFN
- Stock
- 42,846
- In Stock ：
- 42,846
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Diodes - RF
- Reverse Test Voltage :
- 20V
- JESD-30 Code :
- R-PDSO-N2
- Current - Max :
- 100mA
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Diode Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Application :
- ATTENUATOR; SWITCHING
- Operating Temperature :
- -65°C~150°C TJ
- HTS Code :
- 8541.10.00.70
- Terminal Form :
- NO LEAD
- Terminal Position :
- Dual
- Number of Terminations :
- 2
- Diode Res Test Current :
- 0.5mA
- Pin Count :
- 2
- Diode Capacitance-Nom :
- 0.28pF
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Diode Capacitance-Max :
- 0.28pF
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- 2-XDFN
- Frequency Band :
- S B
- Power Dissipation-Max :
- 135mW
- Capacitance @ Vr, F :
- 0.28pF @ 20V 1MHz
- Resistance @ If, F :
- 800mOhm @ 100mA 100MHz
- Packaging :
- Tape and Reel (TR)
- Breakdown Voltage-Min :
- 50V
- Terminal Finish :
- Tin (Sn)
- Minority Carrier Lifetime-Nom :
- 0.27 µs
- Base Part Number :
- BAP55
- Diode Forward Resistance-Max :
- 4.5Ohm
- Voltage - Peak Reverse (Max) :
- 50V
- Diode Res Test Frequency :
- 100MHz
- Diode Type :
- PIN - Single
- Factory Lead Time :
- 16 Weeks
- Datasheets
- BAP55LX,315
PIN - Single 0.28pF @ 20V 1MHz -65°C~150°C TJ 2 Terminations SILICON 260 DUAL Tape & Reel (TR) 2-XDFN
BAP55LX,315 Overview
The device is designed to operate from a maximal current of 100mA volts.A maximum reverse voltage of 50V is specified in the applicable device specifications.The device may occasionally run at its lowest breakdown voltage.Reverse test voltages within 20V are required for a valid conversion result.
BAP55LX,315 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 50V
BAP55LX,315 Applications
There are a lot of NXP USA Inc.
BAP55LX,315 applications of RF diodes.
- Compensators
- Radar systems for industrial use
- Ultra high-speed switching
- Clamping circuits
- Diode ring mixer
- RF detector
- RF voltage doubler
- Wearables
- Smart metering
- Set top boxes
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