BAP50-05,215
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- Mfr.Part #
- BAP50-05,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- RF DIODE PIN 50V 250MW TO236AB
- Stock
- 38,283
- In Stock ：
- 38,283
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Diodes - RF
- Voltage - Peak Reverse (Max) :
- 50V
- Terminal Form :
- Gull wing
- Number of Elements :
- 2
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Base Part Number :
- BAP50-05
- Packaging :
- Tape and Reel (TR)
- Diode Forward Resistance-Max :
- 40Ohm
- Diode Res Test Current :
- 0.5mA
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- COMMON CATHODE, 2 ELEMENTS
- Terminal Finish :
- Tin (Sn)
- Breakdown Voltage-Min :
- 50V
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 8 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Reverse Test Voltage :
- 1V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Diode Type :
- PIN - 1 Pair Common Cathode
- Diode Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-G3
- Resistance @ If, F :
- 5Ohm @ 10mA 100MHz
- Power Dissipation-Max :
- 250mW
- Diode Res Test Frequency :
- 100MHz
- Pin Count :
- 3
- Capacitance @ Vr, F :
- 0.5pF @ 5V 1MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Diode Capacitance-Nom :
- 0.6pF
- JESD-609 Code :
- e3
- Current - Max :
- 50mA
- Operating Temperature :
- -65°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Diode Capacitance-Max :
- 0.6pF
- HTS Code :
- 8541.10.00.70
- Datasheets
- BAP50-05,215
PIN - 1 Pair Common Cathode 0.5pF @ 5V 1MHz -65°C~150°C TJ 3 Terminations SILICON 260 DUAL Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3
BAP50-05,215 Overview
Operating from 50mA is the maximum current for this device.The maximum peak reverse voltage for this device is 50V, according to the applicable device specifications.There may be times when this device runs at its lowest possible breakdown voltage, which is 50V.Valid conversion results require a reverse test voltage within 1V.
BAP50-05,215 Features
from a maximum current of 50mA volts
at its lowest breakdown voltage of 50V
BAP50-05,215 Applications
There are a lot of NXP USA Inc.
BAP50-05,215 applications of RF diodes.
- Radar systems for industrial use
- Ultra high-speed switching
- Clamping circuits
- Diode ring mixer
- RF detector
- RF voltage doubler
- Wearables
- Smart metering
- Set top boxes
- RF attenuators and switches
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