BAP51-03,115

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Mfr.Part #
BAP51-03,115
Manufacturer
NXP Semiconductors
Package / Case
SC-76, SOD-323
Datasheet
Download
Description
RF DIODE PIN 50V 500MW SOD323
Stock
10,699
In Stock :
10,699

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Manufacturer :
NXP Semiconductors
Product Category :
Diodes - RF
Power Dissipation-Max :
500mW
Terminal Position :
Dual
Packaging :
Tape and Reel (TR)
Diode Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Diode Res Test Frequency :
100MHz
Surface Mount :
yes
Factory Lead Time :
13 Weeks
Diode Type :
PIN - Single
Terminal Form :
Gull wing
HTS Code :
8541.10.00.70
JESD-30 Code :
R-PDSO-G2
Capacitance @ Vr, F :
0.35pF @ 5V 1MHz
Pin Count :
2
Qualification Status :
Not Qualified
Diode Res Test Current :
0.5mA
Reverse Test Voltage :
1V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Max :
50mA
Breakdown Voltage-Min :
60V
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
Terminal Finish :
Tin (Sn)
Operating Temperature :
-65°C~150°C TJ
JESD-609 Code :
e3
Published :
2004
Diode Capacitance-Nom :
0.55pF
Package / Case :
SC-76, SOD-323
Resistance @ If, F :
2.5Ohm @ 10mA 100MHz
Diode Capacitance-Max :
0.55pF
Number of Terminations :
2
Minority Carrier Lifetime-Nom :
0.55 µs
Base Part Number :
BAP51
Voltage - Peak Reverse (Max) :
50V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
BAP51-03,115
Introducing Diodes - RF NXP Semiconductors BAP51-03,115 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Package / Case:SC-76, SOD-323, Number of Terminations:2, Base Part Number:BAP51, BAP51-03,115 pinout, BAP51-03,115 datasheet PDF, BAP51-03,115 amp .Beyond Diodes - RF NXP Semiconductors BAP51-03,115 ,we also offer SMP1330-005LF, SMS3923-081LF, MA4P7438-287T, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BAP51-03,115


PIN - Single 0.35pF @ 5V 1MHz -65°C~150°C TJ 2 Terminations SILICON 260 DUAL Tape & Reel (TR) SC-76, SOD-323

BAP51-03,115 Overview


There is no limit to how much current can be applied to this device at 50mA.RF diode operates at a maximum reverse voltage of 50V in accordance wRF diodeh the device specifications.On occasion, this device can run at its lowest breakdown voltage of 60V.For a conversion result to be valid, it must be within 1V.

BAP51-03,115 Features


from a maximum current of 50mA volts
at its lowest breakdown voltage of 60V


BAP51-03,115 Applications


There are a lot of NXP USA Inc.
BAP51-03,115 applications of RF diodes.


  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
  • UHF mixer
  • Sampling circuits
  • Modulators
  • Phase detection
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