BAP50-03,115

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Mfr.Part #
BAP50-03,115
Manufacturer
NXP Semiconductors
Package / Case
SC-76, SOD-323
Datasheet
Download
Description
RF DIODE PIN 50V 500MW SOD323
Stock
11,275
In Stock :
11,275

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Manufacturer :
NXP Semiconductors
Product Category :
Diodes - RF
Reverse Test Voltage :
1V
Published :
1999
Diode Element Material :
SILICON
Resistance @ If, F :
5Ohm @ 10mA 100MHz
Voltage - Peak Reverse (Max) :
50V
Terminal Position :
Dual
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Surface Mount :
yes
Breakdown Voltage-Min :
50V
Diode Res Test Frequency :
100MHz
Power Dissipation-Max :
500mW
Capacitance @ Vr, F :
0.35pF @ 5V 1MHz
JESD-30 Code :
R-PDSO-G2
JESD-609 Code :
e3
Operating Temperature :
-65°C~150°C TJ
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
HTS Code :
8541.10.00.70
Pin Count :
2
Factory Lead Time :
8 Weeks
Current - Max :
50mA
Diode Res Test Current :
0.5mA
Diode Capacitance-Nom :
0.55pF
RoHS Status :
ROHS3 Compliant
Diode Type :
PIN - Single
Diode Forward Resistance-Max :
5Ohm
Number of Terminations :
2
Package / Case :
SC-76, SOD-323
Packaging :
Tape and Reel (TR)
Terminal Finish :
Tin (Sn)
Diode Capacitance-Max :
0.55pF
Terminal Form :
Gull wing
Base Part Number :
BAP50
Datasheets
BAP50-03,115
Introducing Diodes - RF NXP Semiconductors BAP50-03,115 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Number of Terminations:2, Package / Case:SC-76, SOD-323, Base Part Number:BAP50, BAP50-03,115 pinout, BAP50-03,115 datasheet PDF, BAP50-03,115 amp .Beyond Diodes - RF NXP Semiconductors BAP50-03,115 ,we also offer SMP1330-005LF, SMS3923-081LF, MA4P7438-287T, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BAP50-03,115


PIN - Single 0.35pF @ 5V 1MHz -65°C~150°C TJ 2 Terminations SILICON 260 DUAL Tape & Reel (TR) SC-76, SOD-323

BAP50-03,115 Overview


Operating from 50mA is the maximum current for this device.The maximum peak reverse voltage for this device is 50V, according to the applicable device specifications.There may be times when this device runs at its lowest possible breakdown voltage, which is 50V.Valid conversion results require a reverse test voltage within 1V.

BAP50-03,115 Features


from a maximum current of 50mA volts
at its lowest breakdown voltage of 50V


BAP50-03,115 Applications


There are a lot of NXP USA Inc.
BAP50-03,115 applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
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