BAP51L,315

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Mfr.Part #
BAP51L,315
Manufacturer
NXP Semiconductors
Package / Case
SOD-882
Datasheet
Download
Description
RF DIODE PIN 60V 500MW DFN1006-2
Stock
49,545
In Stock :
49,545

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Manufacturer :
NXP Semiconductors
Product Category :
Diodes - RF
Number of Terminations :
2
Diode Element Material :
SILICON
Current - Max :
100mA
Base Part Number :
BAP51
Frequency Band :
S B
Operating Temperature :
-65°C~150°C TJ
Packaging :
Tape and Reel (TR)
Terminal Finish :
Tin
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
HTS Code :
8541.10.00.80
Diode Type :
PIN - Single
Capacitance @ Vr, F :
0.3pF @ 5V 1MHz
Minority Carrier Lifetime-Nom :
0.55 µs
Package / Case :
SOD-882
Terminal Position :
BOTTOM
Power Dissipation-Max :
500mW
Surface Mount :
yes
Application :
ATTENUATOR; SWITCHING
JESD-30 Code :
R-PBCC-N2
Terminal Form :
NO LEAD
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Resistance @ If, F :
1.5Ohm @ 100mA 100MHz
Voltage - Peak Reverse (Max) :
60V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Diode Capacitance-Max :
0.4pF
ECCN Code :
EAR99
Pin Count :
2
JESD-609 Code :
e3
Breakdown Voltage-Min :
60V
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Qualification Status :
Not Qualified
Datasheets
BAP51L,315
Introducing Diodes - RF NXP Semiconductors BAP51L,315 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Base Part Number:BAP51, Operating Temperature:-65°C~150°C TJ, Package / Case:SOD-882, BAP51L,315 pinout, BAP51L,315 datasheet PDF, BAP51L,315 amp .Beyond Diodes - RF NXP Semiconductors BAP51L,315 ,we also offer SMP1330-005LF, SMS3923-081LF, MA4P7438-287T, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BAP51L,315


PIN - Single 0.3pF @ 5V 1MHz -65°C~150°C TJ 2 Terminations SILICON NOT SPECIFIED BOTTOM Tape & Reel (TR) SOD-882

BAP51L,315 Overview


The maximum current of this device is 100mA.This device operates at a maximum reverse voltage of 60V in accordance with its applicable specifications.This device may operate at its lowest breakdown voltage of 60V on occasion.

BAP51L,315 Features


from a maximum current of 100mA volts
at its lowest breakdown voltage of 60V


BAP51L,315 Applications


There are a lot of NXP USA Inc.
BAP51L,315 applications of RF diodes.


  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
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