ATF-511P8-TR1

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Power - Output :

30dBm

Peak Reflow Temperature (Cel) :

260

DS Breakdown Voltage-Min :

7V

Terminal Position :

Dual

Case Connection :

SOURCE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

6 Weeks

ECCN Code :

EAR99

Power Dissipation Ambient-Max :

3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Current - Test :

200mA

Additional Feature :

LOW NOISE

RoHS Status :

RoHS Compliant

Frequency :

2GHz

Noise Figure :

1.4dB

Number of Elements :

1

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

1A

Terminal Form :

NO LEAD

Reach Compliance Code :

Compliant

Gain :

14.8dB

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

yes

Voltage - Rated :

7V

Operating Temperature (Max) :

150°C

Package / Case :

8-WFDFN Exposed Pad

Configuration :

Single

HTS Code :

8541.29.00.75

Operating Mode :

ENHANCEMENT MODE

Current Rating (Amps) :

1A

Published :

2008

JESD-30 Code :

R-PDSO-N8

Transistor Application :

AMPLIFIER

Transistor Type :

E-pHEMT

Voltage - Test :

4.5V

FET Technology :

HIGH ELECTRON MOBILITY

Number of Terminations :

8