APTGT20DDA60T3G
- Mfr.Part #
- APTGT20DDA60T3G
- Manufacturer
- Microsemi
- Package / Case
- SP3
- Datasheet
- Download
- Description
- IGBT MODULE 600V 32A 62W SP3
- Stock
- 36,015
- In Stock :
- 36,015
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - IGBTs - Modules
- JESD-30 Code :
- R-XUFM-X25
- Input Capacitance :
- 1.1nF
- Configuration :
- Dual Boost Chopper
- Turn Off Time-Nom (toff) :
- 310 ns
- Mount :
- Chassis Mount
- Current - Collector Cutoff (Max) :
- 250μA
- Collector Emitter Voltage (VCEO) :
- 1.9V
- Reach Compliance Code :
- Unknown
- Operating Temperature :
- -40°C~175°C TJ
- Terminal Form :
- UNSPECIFIED
- Collector Emitter Breakdown Voltage :
- 600V
- Terminal Finish :
- TIN SILVER COPPER
- Additional Feature :
- AVALANCHE RATED
- IGBT Type :
- Trench Field Stop
- Mounting Type :
- Chassis Mount
- Element Configuration :
- Dual
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Input :
- Standard
- Case Connection :
- Isolated
- Published :
- 2006
- Number of Elements :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 15V, 20A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 25
- Polarity/Channel Type :
- N-Channel
- Package / Case :
- SP3
- NTC Thermistor :
- yes
- JESD-609 Code :
- e1
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 32A
- Max Power Dissipation :
- 62W
- Input Capacitance (Cies) @ Vce :
- 1.1nF @ 25V
- Gate-Emitter Voltage-Max :
- 20V
- Transistor Application :
- POWER CONTROL
- Power - Max :
- 62W
- Terminal Position :
- UPPER
- Turn On Time :
- 170 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 25
- Datasheets
- APTGT20DDA60T3G
APTGT20DDA60T3G datasheet pdf and Transistors - IGBTs - Modules product details from Microsemi Corporation stock available at
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