APT9M100B

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Current - Continuous Drain (Id) @ 25°C :

9A Tc

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

40 ns

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

11ns

Pin Count :

3

JESD-609 Code :

e1

Package / Case :

TO-247-3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

335W

Continuous Drain Current (ID) :

9A

Case Connection :

DRAIN

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

1000V

Fall Time (Typ) :

10 ns

JESD-30 Code :

R-PSFM-T3

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 5A, 10V

Terminal Finish :

TIN SILVER COPPER

Published :

1997

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2605pF @ 25V

Factory Lead Time :

22 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Mount :

Through Hole

Series :

POWER MOS 8™

JEDEC-95 Code :

TO-247AD

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Voltage - Rated DC :

1kV

Operating Temperature :

-55°C~150°C TJ

Current Rating :

9A

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

9A

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 1mA

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

575 mJ

Power Dissipation-Max :

335W Tc

Packaging :

Tube

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

37A

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

12 ns