APT94N65B2C3G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Package / Case :

TO-247-3 Variant

Vgs(th) (Max) @ Id :

3.9V @ 5.8mA

Terminal Position :

Single

DS Breakdown Voltage-Min :

650V

Power Dissipation-Max :

833W Tc

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Number of Elements :

1

Turn On Delay Time :

32 ns

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

580nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Factory Lead Time :

22 Weeks

Rise Time :

59ns

Mount :

Through Hole

Published :

1997

Power Dissipation :

415W

Rds On (Max) @ Id, Vgs :

35m Ω @ 47A, 10V

Series :

CoolMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

94A Tc

Number of Terminations :

3

FET Type :

N-Channel

Continuous Drain Current (ID) :

94A

Input Capacitance (Ciss) (Max) @ Vds :

13940pF @ 25V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

650V

Lifecycle Status :

Obsolete (Last Updated: 1 month ago)

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Fall Time (Typ) :

167 ns

Turn-Off Delay Time :

498 ns

Pulsed Drain Current-Max (IDM) :

282A