APT30GS60KRG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Collector Emitter Breakdown Voltage :

600V

Turn On Time :

45 ns

Number of Terminations :

3

Max Collector Current :

54A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Polarity/Channel Type :

N-Channel

Pin Count :

3

Transistor Element Material :

SILICON

Packaging :

Tube

Number of Elements :

1

Published :

2012

Gate-Emitter Voltage-Max :

30V

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Max Power Dissipation :

250W

Gate Charge :

145nC

Element Configuration :

Single

Switching Energy :

570μJ (off)

IGBT Type :

NPT

Gate-Emitter Thr Voltage-Max :

5V

Td (on/off) @ 25°C :

16ns/360ns

Current - Collector Pulsed (Icm) :

113A

Collector Emitter Voltage (VCEO) :

600V

Turn Off Time-Nom (toff) :

412 ns

Mounting Type :

Through Hole

Pbfree Code :

yes

Power - Max :

250W

Terminal Finish :

TIN SILVER COPPER

JESD-30 Code :

R-PSFM-T3

RoHS Status :

RoHS Compliant

JEDEC-95 Code :

TO-220AB

Case Connection :

COLLECTOR

Vce(on) (Max) @ Vge, Ic :

3.15V @ 15V, 30A

Package / Case :

TO-220-3

Transistor Application :

Motor Control

Radiation Hardening :

No

Input Type :

Standard

Test Condition :

400V, 30A, 9.1 Ω, 15V