APT30GS60KRG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Terminal Finish :

TIN SILVER COPPER

Turn Off Time-Nom (toff) :

412 ns

Case Connection :

COLLECTOR

Power - Max :

250W

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Max Collector Current :

54A

RoHS Status :

RoHS Compliant

Collector Emitter Voltage (VCEO) :

600V

Current - Collector Pulsed (Icm) :

113A

Gate Charge :

145nC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Time :

45 ns

Published :

2012

Number of Elements :

1

JESD-609 Code :

e1

IGBT Type :

NPT

Mount :

Through Hole

Td (on/off) @ 25°C :

16ns/360ns

Max Power Dissipation :

250W

Transistor Application :

Motor Control

Gate-Emitter Thr Voltage-Max :

5V

JESD-30 Code :

R-PSFM-T3

Gate-Emitter Voltage-Max :

30V

Vce(on) (Max) @ Vge, Ic :

3.15V @ 15V, 30A

Number of Terminations :

3

Switching Energy :

570μJ (off)

Input Type :

Standard

Transistor Element Material :

SILICON

Packaging :

Tube

Test Condition :

400V, 30A, 9.1 Ω, 15V

Pbfree Code :

yes

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Polarity/Channel Type :

N-Channel

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

600V