3LN01S-TL-E

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Mfr.Part #
3LN01S-TL-E
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 30V 150MA SMCP
Stock
274,203
In Stock :
274,203

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
120 ns
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±10V
Element Configuration :
Single
Published :
2006
Width :
800μm
Drain Current-Max (Abs) (ID) :
0.15A
JESD-609 Code :
e6
Turn On Delay Time :
19 ns
Height :
750μm
Lead Free :
Lead Free
Gate Charge (Qg) (Max) @ Vgs :
1.58nC @ 10V
Power Dissipation-Max :
150mW Ta
Contact Plating :
Tin
RoHS Status :
RoHS Compliant
FET Type :
N-Channel
ECCN Code :
EAR99
Rise Time :
65ns
Current - Continuous Drain (Id) @ 25°C :
150mA Ta
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
155 ns
Drain to Source Voltage (Vdss) :
30V
Number of Pins :
3
Power Dissipation :
150mW
Gate to Source Voltage (Vgs) :
10V
Pin Count :
3
Rds On (Max) @ Id, Vgs :
3.7 Ω @ 80mA, 4V
Drive Voltage (Max Rds On,Min Rds On) :
1.5V 4V
Operating Temperature :
150°C TJ
Radiation Hardening :
No
Input Capacitance (Ciss) (Max) @ Vds :
7pF @ 10V
Length :
1.6mm
Mount :
Surface Mount
Pbfree Code :
yes
Continuous Drain Current (ID) :
150mA
Mounting Type :
Surface Mount
Package / Case :
TO-236-3, SC-59, SOT-23-3
Datasheets
3LN01S-TL-E
Introducing Transistors - FETs, MOSFETs - Single onsemi 3LN01S-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, 3LN01S-TL-E pinout, 3LN01S-TL-E datasheet PDF, 3LN01S-TL-E amp .Beyond Transistors - FETs, MOSFETs - Single onsemi 3LN01S-TL-E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 3LN01S-TL-E


N-Channel Tape & Reel (TR) 3.7 Ω @ 80mA, 4V ±10V 7pF @ 10V 1.58nC @ 10V 30V TO-236-3, SC-59, SOT-23-3

3LN01S-TL-E Overview


A device's maximum input capacitance is 7pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 150mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 0.15A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 155 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (1.5V 4V) to reduce its overall power consumption.

3LN01S-TL-E Features


a continuous drain current (ID) of 150mA
the turn-off delay time is 155 ns
a 30V drain to source voltage (Vdss)


3LN01S-TL-E Applications


There are a lot of ON Semiconductor
3LN01S-TL-E applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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