3LN01C-TB-E
- Mfr.Part #
- 3LN01C-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 150MA 3CP
- Stock
- 105,098
- In Stock :
- 105,098
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 150mA Ta
- Fall Time (Typ) :
- 120 ns
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gate Charge (Qg) (Max) @ Vgs :
- 1.58nC @ 10V
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Published :
- 2006
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 155 ns
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 250mW Ta
- Continuous Drain Current (ID) :
- 150mA
- Drain Current-Max (Abs) (ID) :
- 0.15A
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 7pF @ 10V
- Element Configuration :
- Single
- Turn On Delay Time :
- 19 ns
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4V
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Rise Time :
- 65ns
- Power Dissipation :
- 250mW
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Length :
- 2.9mm
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 10V
- HTS Code :
- 8541.21.00.95
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±10V
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 3.7 Ω @ 80mA, 4V
- Width :
- 1.5mm
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Height :
- 1.1mm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e6
- Datasheets
- 3LN01C-TB-E

N-Channel Tape & Reel (TR) 3.7 Ω @ 80mA, 4V ±10V 7pF @ 10V 1.58nC @ 10V 30V TO-236-3, SC-59, SOT-23-3
3LN01C-TB-E Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150mA amps.A device can conduct a maximum continuous current of [0.15A] according to its drain current.It is [155 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 19 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.5V 4V).
3LN01C-TB-E Features
a continuous drain current (ID) of 150mA
the turn-off delay time is 155 ns
a 30V drain to source voltage (Vdss)
3LN01C-TB-E Applications
There are a lot of ON Semiconductor
3LN01C-TB-E applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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