3LN01C-TB-H
- Mfr.Part #
- 3LN01C-TB-H
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 150MA 3CP
- Stock
- 43,690
- In Stock :
- 43,690
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 30V
- Operating Temperature :
- 150°C TJ
- Supplier Device Package :
- 3-CP
- Gate Charge (Qg) (Max) @ Vgs :
- 1.58nC @ 10V
- Power Dissipation-Max :
- 250mW Ta
- Vgs (Max) :
- ±10V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 3.7Ohm @ 80mA, 4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 7pF @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Continuous Drain (Id) @ 25°C :
- 150mA Ta
- Datasheets
- 3LN01C-TB-H

N-Channel Tape & Reel (TR) 3.7Ohm @ 80mA, 4V ±10V 7pF @ 10V 1.58nC @ 10V 30V TO-236-3, SC-59, SOT-23-3
3LN01C-TB-H Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7pF @ 10V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 1.5V 4V volts (1.5V 4V).
3LN01C-TB-H Features
a 30V drain to source voltage (Vdss)
3LN01C-TB-H Applications
There are a lot of Rochester Electronics, LLC
3LN01C-TB-H applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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