30A02CH-TL-E

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Mfr.Part #
30A02CH-TL-E
Manufacturer
onsemi
Package / Case
SC-96
Datasheet
Download
Description
TRANS PNP 30V 0.7A 3CPH
Stock
15,518
In Stock :
15,518

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation :
700mW
Emitter Base Voltage (VEBO) :
5V
Max Power Dissipation :
700mW
Height :
900μm
Transistor Element Material :
SILICON
Number of Pins :
3
Current - Collector Cutoff (Max) :
100nA ICBO
Polarity/Channel Type :
PNP
Transition Frequency :
520MHz
Length :
2.9mm
Number of Elements :
1
Max Frequency :
520MHz
Published :
2003
Collector Emitter Saturation Voltage :
-220mV
Frequency - Transition :
520MHz
Lead Free :
Lead Free
Pin Count :
3
Package / Case :
SC-96
Transistor Type :
PNP
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Collector Base Voltage (VCBO) :
30V
Terminal Form :
Gull wing
Collector Emitter Voltage (VCEO) :
30V
Width :
1.6mm
JESD-609 Code :
e6
Pbfree Code :
yes
Vce Saturation (Max) @ Ib, Ic :
220mV @ 10mA, 200mA
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 10mA 2V
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
700mA
Surface Mount :
yes
Collector Emitter Breakdown Voltage :
30V
Factory Lead Time :
5 Weeks
Packaging :
Tape and Reel (TR)
Number of Terminations :
3
Operating Temperature :
150°C TJ
Element Configuration :
Single
Terminal Position :
Dual
Transistor Application :
SWITCHING
Mounting Type :
Surface Mount
Datasheets
30A02CH-TL-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 30A02CH-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:SC-96, Number of Terminations:3, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, 30A02CH-TL-E pinout, 30A02CH-TL-E datasheet PDF, 30A02CH-TL-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 30A02CH-TL-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 30A02CH-TL-E


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-96 Tape & Reel (TR) Surface Mount

30A02CH-TL-E Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 10mA 2V.The collector emitter saturation voltage is -220mV, which allows for maximum design flexibility.When VCE saturation is 220mV @ 10mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 520MHz.A maximum collector current of 700mA volts can be achieved.

30A02CH-TL-E Features


the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -220mV
the vce saturation(Max) is 220mV @ 10mA, 200mA
the emitter base voltage is kept at 5V
a transition frequency of 520MHz


30A02CH-TL-E Applications


There are a lot of ON Semiconductor
30A02CH-TL-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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