30A02MH-TL-E

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Mfr.Part #
30A02MH-TL-E
Manufacturer
onsemi
Package / Case
3-SMD, Flat Lead
Datasheet
Download
Description
TRANS PNP 30V 0.7A 3MCPH
Stock
3,207
In Stock :
3,207

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power - Max :
600mW
Contact Plating :
Tin
Published :
2009
ECCN Code :
EAR99
hFE Min :
200
Factory Lead Time :
7 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 10mA 2V
Pin Count :
3
Package / Case :
3-SMD, Flat Lead
Packaging :
Tape and Reel (TR)
Operating Temperature :
150°C TJ
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Breakdown Voltage :
30V
Max Power Dissipation :
600mW
Transistor Type :
PNP
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
30V
Number of Pins :
3
Mounting Type :
Surface Mount
Vce Saturation (Max) @ Ib, Ic :
220mV @ 10mA, 200mA
Frequency - Transition :
520MHz
RoHS Status :
ROHS3 Compliant
Max Collector Current :
700mA
Collector Emitter Voltage (VCEO) :
-220mV
Pbfree Code :
yes
Current - Collector Cutoff (Max) :
100nA ICBO
JESD-609 Code :
e6
Datasheets
30A02MH-TL-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 30A02MH-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:3-SMD, Flat Lead, Operating Temperature:150°C TJ, Number of Pins:3, Mounting Type:Surface Mount, 30A02MH-TL-E pinout, 30A02MH-TL-E datasheet PDF, 30A02MH-TL-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 30A02MH-TL-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 30A02MH-TL-E


PNP 150°C TJ 100nA ICBO 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount

30A02MH-TL-E Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 10mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 700mA volts.

30A02MH-TL-E Features


the DC current gain for this device is 200 @ 10mA 2V
the vce saturation(Max) is 220mV @ 10mA, 200mA
the emitter base voltage is kept at 5V


30A02MH-TL-E Applications


There are a lot of ON Semiconductor
30A02MH-TL-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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