2STW200

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Mfr.Part #
2STW200
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS PNP DARL 80V 25A TO247-3
Stock
Please RFQ
In Stock :
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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Saturation Voltage :
3.5V
Transistor Application :
SWITCHING
Contact Plating :
Tin
ECCN Code :
EAR99
Max Power Dissipation :
130W
Transistor Element Material :
SILICON
Number of Terminations :
3
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-247-3
DC Current Gain (hFE) (Min) @ Ic, Vce :
500 @ 10A 3V
Continuous Collector Current :
25A
Number of Elements :
1
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
80V
JESD-30 Code :
R-PSFM-T3
Height :
24.45mm
JESD-609 Code :
e3
Collector Base Voltage (VCBO) :
80V
Emitter Base Voltage (VEBO) :
1V
Lead Free :
Lead Free
Base Part Number :
2STW
Operating Temperature :
150°C TJ
Current - Collector Cutoff (Max) :
500μA
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Mount :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
3.5V @ 80mA, 20A
Power Dissipation :
130W
Pin Count :
3
Transistor Type :
PNP - Darlington
Max Junction Temperature (Tj) :
150°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity :
PNP
Factory Lead Time :
8 Weeks
hFE Min :
300
Element Configuration :
Single
Mounting Type :
Through Hole
Max Collector Current :
25A
Collector Emitter Breakdown Voltage :
80V
Weight :
6.500007g
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics 2STW200 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-247-3, Base Part Number:2STW, Operating Temperature:150°C TJ, Mounting Type:Through Hole, 2STW200 pinout, 2STW200 datasheet PDF, 2STW200 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics 2STW200 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics 2STW200


PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON  TO-247-3 Tube Through Hole

2STW200 Description


 

The devices are produced using planar technology and have a monolithic Darlington arrangement and "base island" layout.


 


 

2STW200 Features


 

  • Complementary NPN - PNP transistors

  • Monolithic Darlington configuration


 


 

2STW200 Applications


 

  • Automotive

  • Personal electronics

  • Communications equipment


 

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