2STW100
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- Mfr.Part #
- 2STW100
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 25A TO247-3
- Stock
- 246
- In Stock ：
- 246
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 130W
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10A 3V
- JESD-30 Code :
- R-PSFM-T3
- Collector Base Voltage (VCBO) :
- 80V
- Package / Case :
- TO-247-3
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Polarity :
- NPN
- Collector Emitter Voltage (VCEO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 80mA, 20A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- NPN - Darlington
- Element Configuration :
- Single
- Base Part Number :
- 2STW
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 3
- Power Dissipation :
- 130W
- Collector Emitter Saturation Voltage :
- 3.5V
- Height :
- 24.45mm
- Max Collector Current :
- 25A
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 1V
- Collector Emitter Breakdown Voltage :
- 80V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 500μA
- hFE Min :
- 300
- Max Junction Temperature (Tj) :
- 150°C
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Weight :
- 6.500007g
- Mounting Type :
- Through Hole
- Continuous Collector Current :
- 25A
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Datasheets
- 2STW100
2STW100 Documents
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
2STW100 Overview
In this device, the DC current gain is 500 @ 10A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 80mA, 20A.A 25A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 1V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 25A volts at Single BJT transistors maximum.
2STW100 Features
the DC current gain for this device is 500 @ 10A 3V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 80mA, 20A
the emitter base voltage is kept at 1V
2STW100 Applications
There are a lot of STMicroelectronics
2STW100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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