2STW100
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- Mfr.Part #
- 2STW100
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 25A TO247-3
- Stock
- 246
- In Stock ：
- 246
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Collector Base Voltage (VCBO) :
- 80V
- hFE Min :
- 300
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- R-PSFM-T3
- Max Collector Current :
- 25A
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 80mA, 20A
- Max Junction Temperature (Tj) :
- 150°C
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Polarity :
- NPN
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 80V
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 3.5V
- ECCN Code :
- EAR99
- Continuous Collector Current :
- 25A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Max Power Dissipation :
- 130W
- Contact Plating :
- Tin
- Transistor Type :
- NPN - Darlington
- Collector Emitter Breakdown Voltage :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 130W
- Transistor Element Material :
- SILICON
- Height :
- 24.45mm
- Weight :
- 6.500007g
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Base Part Number :
- 2STW
- Package / Case :
- TO-247-3
- Emitter Base Voltage (VEBO) :
- 1V
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 500μA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10A 3V
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2STW100
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
2STW100 Overview
In this device, the DC current gain is 500 @ 10A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 80mA, 20A.A 25A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 1V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 25A volts at Single BJT transistors maximum.
2STW100 Features
the DC current gain for this device is 500 @ 10A 3V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 80mA, 20A
the emitter base voltage is kept at 1V
2STW100 Applications
There are a lot of STMicroelectronics
2STW100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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