2STF2360
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- Mfr.Part #
- 2STF2360
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A SOT89-3
- Stock
- 6,549
- In Stock ：
- 6,549
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Factory Lead Time :
- 8 Weeks
- Power Dissipation :
- 1.4W
- Max Collector Current :
- -3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 130MHz
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-243AA
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- -60V
- Collector Emitter Voltage (VCEO) :
- -60V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- Termination :
- SMD/SMT
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 150mA, 3A
- Length :
- 4.6mm
- Width :
- 2.6mm
- Transistor Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Max Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 130MHz
- Collector Emitter Saturation Voltage :
- -300mV
- Max Power Dissipation :
- 1.4W
- Height :
- 1.6mm
- Base Part Number :
- 2STF23
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- -6V
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 1A 2V
- Radiation Hardening :
- No
- Current - Collector (Ic) (Max) :
- 3A
- Number of Pins :
- 3
- hFE Min :
- 160
- Frequency :
- 130MHz
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Max Junction Temperature (Tj) :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Datasheets
- 2STF2360
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2STF2360 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 1A 2V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 150mA, 3A.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.A transition frequency of 130MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as -3A volts at its maximum.
2STF2360 Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz
2STF2360 Applications
There are a lot of STMicroelectronics
2STF2360 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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