2STF2280
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- Mfr.Part #
- 2STF2280
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 2A SOT89
- Stock
- 6,725
- In Stock ：
- 6,725
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 80V
- Base Part Number :
- 2STF22
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 1.4W
- JESD-30 Code :
- R-PDSO-F4
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 80V
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 2A
- JESD-609 Code :
- e3
- Frequency :
- 50MHz
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-243AA
- Transition Frequency :
- 50MHz
- Collector Base Voltage (VCBO) :
- 80V
- Pin Count :
- 4
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 1mA
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 2V
- Number of Terminations :
- 4
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Terminal Form :
- Flat
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 100mA, 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 1.4W
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 80V
- Datasheets
- 2STF2280
PNP -65°C~150°C TJ 1mA 1 Elements 4 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2STF2280 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 140 @ 100mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 2A volts at its maximum.
2STF2280 Features
the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 250mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
2STF2280 Applications
There are a lot of STMicroelectronics
2STF2280 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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