2SK2503TL
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- Mfr.Part #
- 2SK2503TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 5A CPT3
- Stock
- 9,800
- In Stock ：
- 9,800
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e2
- Peak Reflow Temperature (Cel) :
- 260
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 5A
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 50 ns
- Power Dissipation-Max :
- 20W Tc
- Current Rating :
- 5A
- Published :
- 1998
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 135m Ω @ 2.5A, 10V
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Nominal Vgs :
- 2.5 V
- Fall Time (Typ) :
- 20 ns
- Termination :
- SMD/SMT
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Dual Supply Voltage :
- 60V
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 20A
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 5A Ta
- Power Dissipation :
- 20W
- Resistance :
- 135mOhm
- Rise Time :
- 20ns
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Drain Current-Max (Abs) (ID) :
- 5A
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Contact Plating :
- Copper, Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 520pF @ 10V
- Voltage - Rated DC :
- 60V
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Finish :
- TIN COPPER
- Element Configuration :
- Single
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Turn On Delay Time :
- 5 ns
- Datasheets
- 2SK2503TL
N-Channel Tape & Reel (TR) 135m Ω @ 2.5A, 10V ±20V 520pF @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
2SK2503TL Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 520pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 50 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 20A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4V 10V), this device helps reduce its overall power consumption.
2SK2503TL Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 20A.
2SK2503TL Applications
There are a lot of ROHM Semiconductor
2SK2503TL applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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