2SJ656

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

125 ns

Termination :

Through Hole

Transistor Application :

SWITCHING

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Turn-Off Delay Time :

340 ns

Power Dissipation-Max :

2W Ta 30W Tc

Nominal Vgs :

2.6 V

Turn On Delay Time :

30 ns

HTS Code :

8541.29.00.95

Power Dissipation :

2W

Vgs (Max) :

±20V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

FET Type :

P-Channel

Pin Count :

3

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

72A

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Lead Free :

Lead Free

Dual Supply Voltage :

100V

Continuous Drain Current (ID) :

18A

Drain-source On Resistance-Max :

0.104Ohm

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Rise Time :

110ns

Transistor Element Material :

SILICON

Number of Terminations :

3

Terminal Finish :

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

75.5m Ω @ 9A, 10V

Mounting Type :

Through Hole

Case Connection :

Isolated

Published :

2004

Operating Temperature :

150°C TJ

Number of Pins :

3

Drain to Source Breakdown Voltage :

-100V

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 20V

Radiation Hardening :

No

Operating Mode :

Depletion Mode