2SJ616-TD-E

Specialized ICs onsemi 2SJ616-TD-E Overview

The Specialized ICs onsemi 2SJ616-TD-E is a high-performance MOSFET designed to address demanding power management requirements. This component is engineered to handle a drain-to-source voltage of -30 V, making it suitable for various high-voltage applications. With a continuous drain current of 6 A, it offers reliable performance under continuous operation. The MOSFET features a low drain-to-source resistance of just 69 mΩ when activated by an appropriate gate-to-source voltage. This characteristic ensures efficient conduction and reduced power loss, enhancing the overall efficiency of the electronic systems it is integrated into.

Specialized ICs onsemi 2SJ616-TD-E Key Features

The device highlights several key features that make it a preferred choice for power electronics engineers:

• Continuous drain current (ID) of 6 A
• Low drain-to-source resistance of 69 mΩ at VGS on-state
• Drain to source voltage (Vdss) of -30 V

Specialized ICs onsemi 2SJ616-TD-E Applications

This MOSFET is versatile, with applications spanning a wide range of industries and technologies:

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server / Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Battery Protection Circuit
• Telecom and Server Power Supplies