2SJ604-Z-AZ

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

123 mJ

Reach Compliance Code :

Compliant

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

45 A

Pulsed Drain Current-Max (IDM) :

120 A

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

ECCN Code :

EAR99

Terminal Position :

Single

Number of Elements :

1

Pin Count :

3

Number of Terminals :

2

Transistor Application :

SWITCHING

HTS Code :

8541.29.00.95

DS Breakdown Voltage-Min :

60 V

Package Shape :

RECTANGULAR

Case Connection :

DRAIN

Polarity/Channel Type :

P-Channel

Drain-source On Resistance-Max :

0.043 Ω

Brand Name :

Renesas

Power Dissipation-Max (Abs) :

70 W