2SJ652-1E
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- Mfr.Part #
- 2SJ652-1E
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 28A TO220F-3SG
- Stock
- 1,203
- In Stock ：
- 1,203
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 28A Ta
- Fall Time (Typ) :
- 180 ns
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Rise Time :
- 210ns
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 4360pF @ 20V
- Package / Case :
- TO-220-3 Full Pack
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- -60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2013
- Continuous Drain Current (ID) :
- 28A
- Factory Lead Time :
- 9 Weeks
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 310 ns
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Reach Compliance Code :
- not_compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- FET Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 60V
- Rds On (Max) @ Id, Vgs :
- 38m Ω @ 14A, 10V
- Turn On Delay Time :
- 33 ns
- Power Dissipation-Max :
- 2W Ta 30W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Datasheets
- 2SJ652-1E
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P-Channel Tube 38m Ω @ 14A, 10V ±20V 4360pF @ 20V 80nC @ 10V 60V TO-220-3 Full Pack
2SJ652-1E Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4360pF @ 20V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -60V.As a result of its turn-off delay time, which is 310 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 33 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4V 10V).
2SJ652-1E Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 310 ns
a 60V drain to source voltage (Vdss)
2SJ652-1E Applications
There are a lot of ON Semiconductor
2SJ652-1E applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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