2SJ635-TL-E

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

1W (Ta), 30W (Tc)

Drain to Source Voltage (Vdss) :

60 V

Mounting Type :

Through Hole

Technology :

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs :

60mOhm @ 6A, 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id :

2.6V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

12A (Ta)

Package :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

45 nC @ 10 V

Operating Temperature :

150°C

Supplier Device Package :

TP

Input Capacitance (Ciss) (Max) @ Vds :

2200 pF @ 20 V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

Product Status :

Obsolete

FET Type :

P-Channel

Vgs (Max) :

±20V

FET Feature :

-

Series :

-