2SC4617TLQ
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- Mfr.Part #
- 2SC4617TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A EMT3
- Stock
- 82,848
- In Stock ：
- 82,848
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2009
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- 2SC4617
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Terminations :
- 3
- Transition Frequency :
- 180MHz
- Contact Plating :
- Copper, Silver, Tin
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Factory Lead Time :
- 13 Weeks
- Transistor Element Material :
- SILICON
- Package / Case :
- SC-75, SOT-416
- hFE Min :
- 120
- Gain Bandwidth Product :
- 180MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 7V
- HTS Code :
- 8541.21.00.75
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Max Collector Current :
- 150mA
- Number of Pins :
- 3
- VCEsat-Max :
- 0.4 V
- Current Rating :
- 150mA
- Max Power Dissipation :
- 150mW
- Voltage - Rated DC :
- 50V
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Max Breakdown Voltage :
- 50V
- Type :
- GENERAL PURPOSE
- Collector Emitter Breakdown Voltage :
- 50V
- Terminal Position :
- Dual
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Continuous Collector Current :
- 150mA
- Datasheets
- 2SC4617TLQ
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON SC-75, SOT-416 Tape & Reel (TR) Surface Mount
2SC4617TLQ Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.A 150mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 150mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 180MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.
2SC4617TLQ Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2SC4617TLQ Applications
There are a lot of ROHM Semiconductor
2SC4617TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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