2SC4132T100R
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- Mfr.Part #
- 2SC4132T100R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 120V 2A MPT3
- Stock
- 2,191
- In Stock ：
- 2,191
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Current Rating :
- 1.5A
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSSO-F3
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mount :
- Surface Mount
- Package / Case :
- TO-243AA
- Voltage - Rated DC :
- 120V
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 100mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 5V
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Emitter Breakdown Voltage :
- 120V
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 2A
- Number of Pins :
- 4
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 120V
- Published :
- 2004
- Terminal Form :
- Flat
- Pbfree Code :
- yes
- Transition Frequency :
- 80MHz
- Collector Base Voltage (VCBO) :
- 120V
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 80MHz
- Collector Emitter Saturation Voltage :
- 2V
- Max Power Dissipation :
- 2W
- Max Breakdown Voltage :
- 120V
- Continuous Collector Current :
- 2A
- JESD-609 Code :
- e2
- hFE Min :
- 82
- Mounting Type :
- Surface Mount
- Contact Plating :
- Copper, Tin
- Base Part Number :
- 2SC4132
- Transistor Element Material :
- SILICON
- Datasheets
- 2SC4132T100R
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC4132T100R Overview
In this device, the DC current gain is 180 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 100mA, 1A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 80MHz.Input voltage breakdown is available at 120V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SC4132T100R Features
the DC current gain for this device is 180 @ 100mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz
2SC4132T100R Applications
There are a lot of ROHM Semiconductor
2SC4132T100R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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