2SC4102T106R
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- Mfr.Part #
- 2SC4102T106R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.05A UMT3
- Stock
- 3,919
- In Stock ：
- 3,919
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 2.1mm
- Max Breakdown Voltage :
- 120V
- Mounting Type :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Collector Emitter Saturation Voltage :
- 500mV
- hFE Min :
- 180
- ECCN Code :
- EAR99
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 6V
- Width :
- 1.35mm
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Gain Bandwidth Product :
- 140MHz
- Element Configuration :
- Single
- Package / Case :
- SC-70, SOT-323
- Packaging :
- Tape and Reel (TR)
- Height :
- 900μm
- Collector Emitter Breakdown Voltage :
- 120V
- Contact Plating :
- Copper, Silver, Tin
- Number of Terminations :
- 3
- Base Part Number :
- 2SC4102
- Number of Pins :
- 3
- Published :
- 2011
- Continuous Collector Current :
- 50mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 120V
- Max Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- 50mA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Factory Lead Time :
- 10 Weeks
- Max Power Dissipation :
- 200mW
- Transition Frequency :
- 140MHz
- Voltage - Rated DC :
- 25V
- Max Collector Current :
- 50mA
- Transistor Type :
- NPN
- HTS Code :
- 8541.21.00.75
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 120V
- Datasheets
- 2SC4102T106R
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SC4102T106R Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 2mA 6V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 50mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 50mA.In the part, the transition frequency is 140MHz.This device can take an input voltage of 120V volts before it breaks down.A maximum collector current of 50mA volts can be achieved.
2SC4102T106R Features
the DC current gain for this device is 180 @ 2mA 6V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 140MHz
2SC4102T106R Applications
There are a lot of ROHM Semiconductor
2SC4102T106R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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