2SA1507S
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- Mfr.Part #
- 2SA1507S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 160V 1.5A TO126ML
- Stock
- 10,589
- In Stock ：
- 10,589
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Published :
- 2010
- Case Connection :
- Isolated
- Max Breakdown Voltage :
- 160V
- Gain Bandwidth Product :
- 120MHz
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Pin Count :
- 3
- hFE Min :
- 140
- Emitter Base Voltage (VEBO) :
- -6V
- Collector Emitter Breakdown Voltage :
- 160V
- Collector Emitter Saturation Voltage :
- -200mV
- Collector Emitter Voltage (VCEO) :
- 160V
- Packaging :
- Bulk
- Element Configuration :
- Single
- Frequency :
- 120MHz
- Max Power Dissipation :
- 1.5W
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Max Collector Current :
- 1.5A
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-225AA, TO-126-3
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 1.5W
- Transition Frequency :
- 120MHz
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 180V
- Datasheets
- 2SA1507S
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
2SA1507S Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Input voltage breakdown is available at 160V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
2SA1507S Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 120MHz
2SA1507S Applications
There are a lot of ON Semiconductor
2SA1507S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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