2SA1416T-TD-E
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- Mfr.Part #
- 2SA1416T-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A PCP
- Stock
- 9,542
- In Stock ：
- 9,542
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Height :
- 1.5mm
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e6
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- hFE Min :
- 100
- Length :
- 4.5mm
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 120V
- Collector Emitter Saturation Voltage :
- -600mV
- Collector Emitter Breakdown Voltage :
- 100V
- Width :
- 2.5mm
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 40mA, 400mA
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Power Dissipation :
- 500mW
- Published :
- 2012
- Reach Compliance Code :
- not_compliant
- Package / Case :
- TO-243AA
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Max Frequency :
- 120MHz
- Element Configuration :
- Single
- Pin Count :
- 3
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Gain Bandwidth Product :
- 120MHz
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 1A
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- ECCN Code :
- EAR99
- Transition Frequency :
- 120MHz
- Number of Pins :
- 3
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2SA1416T-TD-E
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PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA1416T-TD-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 40mA, 400mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 120MHz.During maximum operation, collector current can be as low as 1A volts.
2SA1416T-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SA1416T-TD-E Applications
There are a lot of ON Semiconductor
2SA1416T-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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