2SA1312GRTE85LF
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- Mfr.Part #
- 2SA1312GRTE85LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.1A SMINI
- Stock
- 21,305
- In Stock ：
- 21,305
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 150mW
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Published :
- 2009
- Power - Max :
- 150mW
- Packaging :
- Cut Tape (CT)
- Collector Emitter Breakdown Voltage :
- 120V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- 125°C TJ
- Factory Lead Time :
- 11 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Max Collector Current :
- 100mA
- hFE Min :
- 200
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- -120V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 300mV
- Transition Frequency :
- 100MHz
- Max Breakdown Voltage :
- 120V
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Mounting Type :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Datasheets
- 2SA1312GRTE85LF
PNP 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
2SA1312GRTE85LF Overview
This device has a DC current gain of 200 @ 2mA 6V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 120V volts.The maximum collector current is 100mA volts.
2SA1312GRTE85LF Features
the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
2SA1312GRTE85LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1312GRTE85LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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