2SA1036KT146R
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- Mfr.Part #
- 2SA1036KT146R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.5A SMT3
- Stock
- 1,890
- In Stock ：
- 1,890
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 32V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Max Power Dissipation :
- 200mW
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -32V
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 32V
- Pin Count :
- 3
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 200MHz
- Power Dissipation :
- 200mW
- Transistor Type :
- PNP
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Base Part Number :
- 2SA1036
- hFE Min :
- 120
- Max Collector Current :
- 500mA
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Number of Elements :
- 1
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- VCEsat-Max :
- 0.4 V
- Continuous Collector Current :
- -500mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 32V
- Collector Emitter Saturation Voltage :
- -600mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 13 Weeks
- Contact Plating :
- Copper, Silver, Tin
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 40V
- Transistor Element Material :
- SILICON
- Published :
- 2004
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- Operating Temperature :
- 150°C TJ
- Current Rating :
- -500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Frequency :
- 200MHz
- Gain Bandwidth Product :
- 200MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Datasheets
- 2SA1036KT146R
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1036KT146R Overview
In this device, the DC current gain is 120 @ 100mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 30mA, 300mA.Maintaining the continuous collector voltage at -500mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).200MHz is present in the transition frequency.An input voltage of 32V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
2SA1036KT146R Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
2SA1036KT146R Applications
There are a lot of ROHM Semiconductor
2SA1036KT146R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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