2PD601ASW,115
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- Mfr.Part #
- 2PD601ASW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA 2PD601ASW - SMALL S
- Stock
- 13,362
- In Stock ：
- 13,362
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Max Collector Current :
- 100mA
- Collector Emitter Breakdown Voltage :
- 50V
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 60V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- Power Dissipation :
- 200mW
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 290 @ 2mA 10V
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Published :
- 2009
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 200mW
- Package / Case :
- SC-70, SOT-323
- Base Part Number :
- 2PD601A
- hFE Min :
- 290
- Collector Emitter Voltage (VCEO) :
- 50V
- Datasheets
- 2PD601ASW,115
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PD601ASW,115 Overview
In this device, the DC current gain is 290 @ 2mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
2PD601ASW,115 Features
the DC current gain for this device is 290 @ 2mA 10V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2PD601ASW,115 Applications
There are a lot of Nexperia USA Inc.
2PD601ASW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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