2PD601AS,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

3

JESD-30 Code :

R-PDSO-G3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Power - Max :

250mW

Current - Collector Cutoff (Max) :

10nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

290 @ 2mA 10V

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Surface Mount :

yes

Number of Elements :

1

Transistor Type :

NPN

Transition Frequency :

100MHz

Mounting Type :

Surface Mount

VCEsat-Max :

0.5 V

Polarity/Channel Type :

NPN

Frequency - Transition :

100MHz

Terminal Position :

Dual

HTS Code :

8541.21.00.95

Transistor Element Material :

SILICON

Terminal Finish :

Tin

Configuration :

Single

Operating Temperature :

150°C TJ

Voltage - Collector Emitter Breakdown (Max) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Base Part Number :

2PD601A

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-609 Code :

e3

JEDEC-95 Code :

TO-236AB

Current - Collector (Ic) (Max) :

100mA

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Published :

2009

Collector-Base Capacitance-Max :

3.5pF

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)