2PB709ASL,235
- Mfr.Part #
- 2PB709ASL,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT883
- Stock
- 7,459
- In Stock :
- 7,459
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- Automotive, AEC-Q101
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 250mW
- Number of Elements :
- 1
- Power - Max :
- 250mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 290 @ 2mA 10V
- Base Part Number :
- 2PB709A
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 45V
- Max Collector Current :
- 100mA
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 500mV
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Transition Frequency :
- 80MHz
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Published :
- 2008
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Frequency - Transition :
- 80MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Datasheets
- 2PB709ASL,235

PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB709ASL,235 Overview
In this device, the DC current gain is 290 @ 2mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.80MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
2PB709ASL,235 Features
the DC current gain for this device is 290 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 80MHz
2PB709ASL,235 Applications
There are a lot of Nexperia USA Inc.
2PB709ASL,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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