2PB709ARW,115
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- Mfr.Part #
- 2PB709ARW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA 2PB709ARW - SMALL S
- Stock
- 18,055
- In Stock ：
- 18,055
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 70MHz
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 70MHz
- Power Dissipation :
- 200mW
- Published :
- 2009
- Terminal Position :
- Dual
- Series :
- Automotive, AEC-Q101
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- hFE Min :
- 210
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 45V
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 45V
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- Frequency :
- 70MHz
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Package / Case :
- SC-70, SOT-323
- Pin Count :
- 3
- Max Collector Current :
- 100mA
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 200mW
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Base Part Number :
- 2PB709A
- Datasheets
- 2PB709ARW,115
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PB709ARW,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 210 @ 2mA 10V.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 70MHz.A maximum collector current of 100mA volts can be achieved.
2PB709ARW,115 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz
2PB709ARW,115 Applications
There are a lot of Nexperia USA Inc.
2PB709ARW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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