2N7002BKV,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Number of Terminations :

6

Max Dual Supply Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V

Turn-Off Delay Time :

12 ns

Factory Lead Time :

4 Weeks

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rise Time :

6ns

Published :

2010

Operating Temperature :

150°C TJ

Terminal Form :

Flat

Mounting Type :

Surface Mount

Pin Count :

6

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-563, SOT-666

Contact Plating :

Tin

Drain Current-Max (Abs) (ID) :

0.34A

Max Power Dissipation :

350mW

Surface Mount :

yes

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.1V @ 250μA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

FET Feature :

Logic Level Gate

Resistance :

1.6Ohm

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Number of Pins :

6

Drain to Source Breakdown Voltage :

60V

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

7 ns

Continuous Drain Current (ID) :

340mA

Number of Elements :

2

Turn On Delay Time :

5 ns

Series :

Automotive, AEC-Q101, TrenchMOS™

Power Dissipation :

525mW

Peak Reflow Temperature (Cel) :

260

Power - Max :

350mW