2N7002BKV,115

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Mfr.Part #
2N7002BKV,115
Manufacturer
NXP Semiconductors
Package / Case
SOT-563, SOT-666
Datasheet
Download
Description
MOSFET 2N-CH 60V 0.34A SOT666
Stock
9,391
In Stock :
9,391

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Manufacturer :
NXP Semiconductors
Product Category :
Unclassified
Package / Case :
SOT-563, SOT-666
Resistance :
1.6Ohm
Max Power Dissipation :
350mW
Power - Max :
350mW
Transistor Application :
SWITCHING
Pin Count :
6
Fall Time (Typ) :
7 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
260
Rise Time :
6ns
Contact Plating :
Tin
Time@Peak Reflow Temperature-Max (s) :
40
FET Feature :
Logic Level Gate
Max Dual Supply Voltage :
60V
Number of Terminations :
6
Operating Temperature :
150°C TJ
Power Dissipation :
525mW
Turn-Off Delay Time :
12 ns
Gate Charge (Qg) (Max) @ Vgs :
0.6nC @ 4.5V
Terminal Form :
Flat
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
2.1V @ 250μA
FET Type :
2 N-Channel (Dual)
Number of Pins :
6
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
1.6 Ω @ 500mA, 10V
Drain Current-Max (Abs) (ID) :
0.34A
Surface Mount :
yes
Factory Lead Time :
4 Weeks
Gate to Source Voltage (Vgs) :
20V
Lead Free :
Lead Free
Published :
2010
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 10V
JESD-609 Code :
e3
Series :
Automotive, AEC-Q101, TrenchMOS™
Element Configuration :
Dual
Additional Feature :
LOGIC LEVEL COMPATIBLE
Continuous Drain Current (ID) :
340mA
Number of Elements :
2
Packaging :
Tape and Reel (TR)
Radiation Hardening :
No
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
60V
Turn On Delay Time :
5 ns
Datasheets
2N7002BKV,115
Introducing Unclassified NXP Semiconductors 2N7002BKV,115 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-563, SOT-666, Number of Terminations:6, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Pins:6, 2N7002BKV,115 pinout, 2N7002BKV,115 datasheet PDF, 2N7002BKV,115 amp .Beyond Unclassified NXP Semiconductors 2N7002BKV,115 ,we also offer 5801925, F-631, 47480-0001, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors 2N7002BKV,115


2N7002BKV,115 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Nexperia USA Inc. stock available at

Description:
The 2N7002BKV Series Dual N-Channel 60 V 1.6 Ohm 350 mW 0.6nC TrenchMOS FET is a Nexperia transistor designed for use in a variety of applications. It is a dual N-channel FET with a maximum voltage of 60 V and a maximum current of 1.6 Ohms. It has a power dissipation of 350 mW and a gate capacitance of 0.6nC. It is packaged in a SOT666 package.

Features:
• Dual N-Channel FET
• Maximum Voltage: 60 V
• Maximum Current: 1.6 Ohms
• Power Dissipation: 350 mW
• Gate Capacitance: 0.6nC
• Package: SOT666

Applications:
The 2N7002BKV Series Dual N-Channel 60 V 1.6 Ohm 350 mW 0.6nC TrenchMOS FET is suitable for a variety of applications, including power management, motor control, and signal conditioning. It can be used in automotive, industrial, and consumer electronics.
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