2N7002BKV,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Package / Case :

SOT-563, SOT-666

Resistance :

1.6Ohm

Max Power Dissipation :

350mW

Power - Max :

350mW

Transistor Application :

SWITCHING

Pin Count :

6

Fall Time (Typ) :

7 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Rise Time :

6ns

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

40

FET Feature :

Logic Level Gate

Max Dual Supply Voltage :

60V

Number of Terminations :

6

Operating Temperature :

150°C TJ

Power Dissipation :

525mW

Turn-Off Delay Time :

12 ns

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.1V @ 250μA

FET Type :

2 N-Channel (Dual)

Number of Pins :

6

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Drain Current-Max (Abs) (ID) :

0.34A

Surface Mount :

yes

Factory Lead Time :

4 Weeks

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Published :

2010

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

JESD-609 Code :

e3

Series :

Automotive, AEC-Q101, TrenchMOS™

Element Configuration :

Dual

Additional Feature :

LOGIC LEVEL COMPATIBLE

Continuous Drain Current (ID) :

340mA

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Turn On Delay Time :

5 ns