2N6667
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- Mfr.Part #
- 2N6667
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 10A TO220
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- 2N6667
- Current Rating :
- -10A
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time :
- 2 Weeks
- Current - Collector Cutoff (Max) :
- 1mA
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 2W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2007
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -60V
- Max Collector Current :
- 10A
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity :
- PNP
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 2W
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 3V
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 60V
- JEDEC-95 Code :
- TO-220AB
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Surface Mount :
- No
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- Length :
- 10.53mm
- Weight :
- 6.000006g
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- 10A
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Type :
- PNP - Darlington
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 60V
- Width :
- 4.83mm
- Height :
- 15.75mm
- hFE Min :
- 1000
- Collector Emitter Saturation Voltage :
- 2V
- Number of Elements :
- 1
- Datasheets
- 2N6667
PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
2N6667G Overview
This device has a DC current gain of 1000 @ 5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 3V @ 100mA, 10A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 10A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 10A volts is possible.
2N6667G Features
the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
2N6667G Applications
There are a lot of ON Semiconductor
2N6667G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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