2N6667
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- Mfr.Part #
- 2N6667
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 10A TO220
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 60V
- hFE Min :
- 1000
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 4.83mm
- Current Rating :
- -10A
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 2W
- Weight :
- 6.000006g
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- PNP - Darlington
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- 2N6667
- Pin Count :
- 3
- Max Power Dissipation :
- 2W
- Voltage - Rated DC :
- -60V
- Package / Case :
- TO-220-3
- Length :
- 10.53mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -65°C~150°C TJ
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 3V
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Max Collector Current :
- 10A
- Height :
- 15.75mm
- Published :
- 2007
- Factory Lead Time :
- 2 Weeks
- Continuous Collector Current :
- 10A
- Collector Base Voltage (VCBO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- COLLECTOR
- Polarity :
- PNP
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 2V
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 1mA
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Surface Mount :
- No
- Datasheets
- 2N6667
PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
2N6667G Overview
This device has a DC current gain of 1000 @ 5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 3V @ 100mA, 10A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 10A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 10A volts is possible.
2N6667G Features
the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
2N6667G Applications
There are a lot of ON Semiconductor
2N6667G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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