2N5796U

Manufacturer :

TT Electronics

Product Category :

Transistors - Bipolar (BJT) - Arrays

Power Dissipation :

600mW

Published :

1997

Height :

2.032mm

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-65°C~200°C TJ

Power - Max :

600mW

Min Operating Temperature :

-65°C

Collector Emitter Voltage (VCEO) :

60V

Length :

6.35mm

Package / Case :

6-CLCC

Mounting Type :

Surface Mount

Factory Lead Time :

15 Weeks

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

60V

Current - Collector (Ic) (Max) :

600mA

Max Power Dissipation :

600mW

hFE Min :

75

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Collector Emitter Saturation Voltage :

1.6V

Element Configuration :

Dual

Number of Elements :

2

Voltage - Collector Emitter Breakdown (Max) :

60V

Transistor Type :

2 PNP (Dual)

Max Collector Current :

600mA

Mount :

Surface Mount

Supplier Device Package :

6-CLCC

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Collector Emitter Breakdown Voltage :

60V

Current - Collector Cutoff (Max) :

10nA ICBO

Polarity :

PNP

Number of Pins :

6

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Width :

4.445mm

Max Operating Temperature :

200°C