2N5796U

Manufacturer :

TT Electronics

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Operating Temperature :

200°C

Collector Base Voltage (VCBO) :

60V

Collector Emitter Saturation Voltage :

1.6V

Max Collector Current :

600mA

Packaging :

Bulk

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

60V

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Published :

1997

Transistor Type :

2 PNP (Dual)

Power - Max :

600mW

Polarity :

PNP

Height :

2.032mm

RoHS Status :

Non-RoHS Compliant

Element Configuration :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Mount :

Surface Mount

Length :

6.35mm

Current - Collector Cutoff (Max) :

10nA ICBO

Width :

4.445mm

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

600mW

Number of Elements :

2

Number of Pins :

6

Factory Lead Time :

15 Weeks

Supplier Device Package :

6-CLCC

Package / Case :

6-CLCC

Mounting Type :

Surface Mount

hFE Min :

75

Current - Collector (Ic) (Max) :

600mA

Max Power Dissipation :

600mW

Operating Temperature :

-65°C~200°C TJ

Min Operating Temperature :

-65°C

Voltage - Collector Emitter Breakdown (Max) :

60V

Collector Emitter Voltage (VCEO) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)