2N5796

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Saturation Voltage :

1.6V

Max Operating Temperature :

200°C

Current - Collector Cutoff (Max) :

10nA ICBO

Operating Temperature :

-65°C~200°C TJ

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Max Collector Current :

600mA

Collector Base Voltage (VCBO) :

60V

Transistor Type :

2 PNP (Dual)

Power Dissipation :

600mW

Supplier Device Package :

6-CLCC

Number of Elements :

2

Width :

4.445mm

Mount :

Surface Mount

Voltage - Collector Emitter Breakdown (Max) :

60V

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Published :

1997

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

60V

Collector Emitter Voltage (VCEO) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Radiation Hardening :

No

Current - Collector (Ic) (Max) :

600mA

Min Operating Temperature :

-65°C

Package / Case :

6-CLCC

Factory Lead Time :

15 Weeks

Length :

6.35mm

Power - Max :

600mW

Height :

2.032mm

Emitter Base Voltage (VEBO) :

5V

hFE Min :

75

Mounting Type :

Surface Mount

Max Power Dissipation :

600mW

Polarity :

PNP

Packaging :

Bulk